WAFER SERVICE
On our silicon or yours, we can provide virtually any processing service you may need.
WAFER GRINDING / POLISH
We provides polishing services designed to reduce surface roughness and obtain a mirror-like finish on wafer substrates. Polishing is a Thermal-Chemical-Mechanical process which under the prospered balance, produces a surface free of damage, scratches and stains.
In addition to standard polishing procedures, We also provides a kiss-polishing service, which involves a light and delicate polish to remove minor surface scratches or defects.
We possesses single side and double side polishing process capability. Double side polishing produces wafers with the lowest TTV values in the industry.
THERMAL OXIDE
Pure Wafer thermal oxide furnaces are certified for growing oxide on wafers of 100 mm to 300 mm in diameter. We guarantee a ±5% percent industry-standard uniformity across every batch, but typically our processed wafers qualify at a far better rate, enabling us to meet the tightest of customer specifications. With our dry thermal oxidation method, we grow oxides of 500Å to 1000Å and our wet thermal oxidation process is applied for oxides of 1,000 to 100,000Å.
Dry Versus Wet Thermal Oxidation
Table 1 below shows that Pure Wafer thermal oxidation processes uses wet oxidation for oxide thicknesses > 1000 Å and uses dry oxidation for oxide thicknesses < 1000 å. This is because wet oxidation has a much faster growth rate than dry, making wet oxide growth the preferred method for growing thick oxides. wet oxidation has a faster growth rate because water molecules are smaller than oxygen molecules and diffuse faster through silicon dioxide. however, the benefits of using dry oxidation are that although it has a slower growth rate, it is more controlled, more dense, and cleaner than wet oxidation. We can also grow any combination of dry and wet oxide for special applications.
Wet versus Dry Oxide Growth for Thermal Oxide Process
Desired Oxide Thickness / Type of Thermal Oxidation
> 1000 Å Water Vapor / Wet
< 1000 Å Molecular Oxygen / Dry
SILICON NITRIDE WAFERS
We offers a variety of film processing options for your silicon needs. This includes LPCVD nitride, and We can provide wafers with stoichiometric LPCVD nitride or low stress LPCVD nitride, as well as super low stress LPCVD nitride. We also offer high quality PECVD nitride, Low stress PECVD nitride, and PECVD OxyNitride. Wafer diameter is available from 2″ to 300mm and nitride thickness is available from 100Å to 20,000Å.
OTHER FILMS
Film
CVD Tungsten
Technology
Chemical Vapor Deposition (CVD)
Tool
Altus DirectFill
Solutions
Transistor, Interconnect, Advanced Memory, Packaging
Tungsten deposition is used to form conductive features like contacts, vias, and plugs on a chip. These features are small, often narrow, and use only a small amount of metal, so minimizing resistance and achieving complete fill can be difficult. At these nanoscale dimensions, even slight imperfections can impact device performance or cause a chip to fail.
CVD Capabilities
CVD Tungsten 2,000 +/-5% to 7,000 +/-5% Å
CVD Tungsten Nitride 55 +/-5% to 500 +/-5% Å
Film
Physical Vapor Deposition (PVD)
Technology
Sputter films
Tool
INOVA NExT
Solutions
Transistor, Interconnect, Advanced Memory, Packaging
PVD Capabilities
Ta 50 +/-5% to 2,000 +/-5% Å
TaN 50 +/-5% to 2,000 +/-5% Å
Ti 50 +/-5% to 1,000 +/-5% Å
TiN 50 +/-5% to 2,000 +/-5% Å
Al 200 +/-5% to 20,000 +/-5% Å
Cu 100 +/-5% to 2,000 +/-5% Å
Co 100 +/-5% to 2,000 +/-5% Å
W 100 +/-5% to 2,000 +/-5% Å